AP05N50EH-HF Todos los transistores

 

AP05N50EH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP05N50EH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 73.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: TO252

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AP05N50EH-HF datasheet

 ..1. Size:63K  ape
ap05n50eh-hf ap05n50ej-hf.pdf pdf_icon

AP05N50EH-HF

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the to

 5.1. Size:196K  ape
ap05n50eh.pdf pdf_icon

AP05N50EH-HF

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

 6.1. Size:59K  ape
ap05n50ei-hf.pdf pdf_icon

AP05N50EH-HF

AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power sys

 6.2. Size:161K  ape
ap05n50ej.pdf pdf_icon

AP05N50EH-HF

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

Otros transistores... 2SK3283 , 2SK3284 , AP0503GMT-HF , AP0504GH-HF , AP0504GMT-HF , AP05N20GH-HF , AP05N20GI-HF , AP05N20GJ-HF , AON6380 , AP05N50EI-HF , AP05N50EJ-HF , AP05N50H-HF , AP05N50I , AP05N50IB-HF , AP05N50P , AP05N50S-HF , AP0603GH-HF .

History: MSD4N70 | MDU2511SVRH

 

 

 


History: MSD4N70 | MDU2511SVRH

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