AP05N50P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP05N50P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 73.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO220

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AP05N50P datasheet

 ..1. Size:153K  ape
 ap05n50p.pdf pdf_icon

AP05N50P

AP05N50P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0A G S Description G The AP05N50 provide high blocking voltage to overcome voltage surge TO-220(P) D S and sag in the toughest power system with the best comb

 7.1. Size:59K  ape
 ap05n50h-hf.pdf pdf_icon

AP05N50P

AP05N50H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0A G RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toug

 7.2. Size:59K  ape
 ap05n50ei-hf.pdf pdf_icon

AP05N50P

AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power sys

 7.3. Size:196K  ape
 ap05n50eh.pdf pdf_icon

AP05N50P

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

MOSTRAR MÁS

Otros transistores... AP05N20GI-HF, AP05N20GJ-HF, AP05N50EH-HF, AP05N50EI-HF, AP05N50EJ-HF, AP05N50H-HF, AP05N50I, AP05N50IB-HF, IRFP450, AP05N50S-HF, AP0603GH-HF, AP0603GM-HF, AP06P20GJ-HF, AP0704GMT-HF, AP07N70CI-H, AP0803GMP-HF, AP0803GMT-HF