AP0803GMT-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP0803GMT-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 29.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: PMPAK5X6
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AP0803GMT-HF datasheet
ap0803gmt-hf.pdf
AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
ap0803gmt-a-hf.pdf
AP0803GMT-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg
ap0803gmp-hf.pdf
AP0803GMP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m RoHS Compliant & Halogen-Free ID 44A G S Description D D Advanced Power MOSFETs from APEC provide the D D D designer with the best combination of fast switching, ruggedized device design,
Otros transistores... AP05N50P, AP05N50S-HF, AP0603GH-HF, AP0603GM-HF, AP06P20GJ-HF, AP0704GMT-HF, AP07N70CI-H, AP0803GMP-HF, 10N65, AP08N60I-HF, AP08P20GP-HF, AP08P20GS-HF, AP0903GH-HF, AP0903GM-HF, AP0903GYT-HF, AP0904GH-HF, AP0904GJB-HF
History: JCS13N50FC
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