AP09N20H-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP09N20H-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
AP09N20H-HF Datasheet (PDF)
ap09n20h.pdf

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl
ap09n20h j-hf.pdf

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGDSTO-252(H)the best combination of fast switching,
ap09n20bgh-hf.pdf

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f
ap09n20bgh.pdf

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated design andGsilicon process technology to achieve th
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FCH20N60 | VBZE50P03 | IPB60R190C6
History: FCH20N60 | VBZE50P03 | IPB60R190C6



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