AP09N20H-HF Todos los transistores

 

AP09N20H-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP09N20H-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO252
 

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AP09N20H-HF Datasheet (PDF)

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 ap09n20h.pdf pdf_icon

AP09N20H-HF

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 6.2. Size:216K  ape
 ap09n20h j-hf.pdf pdf_icon

AP09N20H-HF

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGDSTO-252(H)the best combination of fast switching,

 7.1. Size:93K  ape
 ap09n20bgh-hf.pdf pdf_icon

AP09N20H-HF

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f

 7.2. Size:230K  ape
 ap09n20bgh.pdf pdf_icon

AP09N20H-HF

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated design andGsilicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP0904GH-HF , AP0904GJB-HF , AP0904GJ-HF , AP0904GMT-HF , AP0904GYT-HF , AP09N20BGH-HF , AP09N20BGI-HF , AP09N20BGP-HF , P60NF06 , AP09N20J-HF , AP09N50I , AP09N50I-HF , AP09N50P-HF , AP09N70I-A , AP09N70I-A-HF , AP09N70I-H-HF , AP09N70R-H .

History: CJA03N10S | SST70R380S2 | UT3418 | AON6906A | KQB3N40 | AP4563AGH | APT10086SLC

 

 
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