AP09N20J-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP09N20J-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO251

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AP09N20J-HF datasheet

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 ap09n20j.pdf pdf_icon

AP09N20J-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl

 7.1. Size:238K  ape
 ap09n20h.pdf pdf_icon

AP09N20J-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl

 7.2. Size:93K  ape
 ap09n20bgh-hf.pdf pdf_icon

AP09N20J-HF

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f

 7.3. Size:216K  ape
 ap09n20h j-hf.pdf pdf_icon

AP09N20J-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description Advanced Power MOSFETs from APEC provide the designer with G D S TO-252(H) the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP0904GJB-HF, AP0904GJ-HF, AP0904GMT-HF, AP0904GYT-HF, AP09N20BGH-HF, AP09N20BGI-HF, AP09N20BGP-HF, AP09N20H-HF, IRFB31N20D, AP09N50I, AP09N50I-HF, AP09N50P-HF, AP09N70I-A, AP09N70I-A-HF, AP09N70I-H-HF, AP09N70R-H, AP09N70P-H