AP09N70P-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP09N70P-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO220

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AP09N70P-H datasheet

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AP09N70P-H

AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90 265VAC off-line AC/DC converter app

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 ap09n70p-a.pdf pdf_icon

AP09N70P-H

AP09N70P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 650V D Fast Switching RDS(ON) 0.75 GG Simple Drive Requirement ID 9A S RoHS Compliant S Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-DC converte

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 ap09n70p-a-hf.pdf pdf_icon

AP09N70P-H

AP09N70P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

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 ap09n70i-a.pdf pdf_icon

AP09N70P-H

AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe

MOSTRAR MÁS

Otros transistores... AP09N20J-HF, AP09N50I, AP09N50I-HF, AP09N50P-HF, AP09N70I-A, AP09N70I-A-HF, AP09N70I-H-HF, AP09N70R-H, IRF9640, AP09N70P-A, AP09N70R, AP09N70R-A-HF, AP09N90CW-HF, AP09N90W, AP09T10GH-HF, AP09T10GK-HF, AP09T10GP-HF