AP09N90CW-HF Todos los transistores

 

AP09N90CW-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP09N90CW-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 516 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO3P
 

 Búsqueda de reemplazo de AP09N90CW-HF MOSFET

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AP09N90CW-HF datasheet

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AP09N90CW-HF

AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6A G RoHS Compliant & Halogen-Free S Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power su

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AP09N90CW-HF

AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6A G RoHS Compliant & Halogen-Free S Description AP09N90C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

 7.1. Size:97K  ape
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AP09N90CW-HF

AP09N90W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche test D BVDSS 900V Fast Switching RDS(ON) 1.2 Simple Drive Requirement ID 8.6A G S Description AP09N90 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO- 3P type provide high block

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ap09n20h.pdf pdf_icon

AP09N90CW-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl

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