2SK3290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SK3290www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3296SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3296 is N-Channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3296 TO-220ABdesigned for low voltage high current applications such as2SK3296-S TO-262DC/DC converter wit

Ordering number:ENN6414N-Channel Silicon MOSFET2SK3292Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3292]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

Ordering number:ENN6345N-Channel Silicon MOSFET2SK3293Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3293]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

Ordering number:ENN6413N-Channel Silicon MOSFET2SK3291Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3291]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3299SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3299 is N-Channel MOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics,2SK3299 TO-220ABdesigned for high voltage applications such as switching power2SK3299-S TO-262supply, AC adapter.2S

SMD Type MOSFETMOS Field Effect Transistor2SK3294TO-263Unit: mmFeatures +0.24.57-0.2+0.11.27-0.1Gate voltage rating 30 VLow on-state resistanceRDS(on) = 160 m MAX. (VGS =10V, ID =10A)+0.10.1max1.27-0.1Low input capacitanceCiss =1500pFTYP. (VDS =10 V, VGS =0 V)+0.10.81-0.12.54Avalanche capability rated1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2Bu

SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3295TO-263Unit: mmFeatures+0.24.5 V drive available 4.57-0.21.27+0.1-0.1Low on-state resistanceRDS(on)1 =18 mMAX. (VGS =10V, ID =18A)Low gate chargeQG =16nCTYP. (ID =35A, VDD =16V, VGS =10V)0.1max1.27+0.1-0.1Built-in gate protection diode+0.1Surface mount device available 0.81-0.12.541Gate