2SK3378 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3378 Silicon N Channel MOS FET High Speed Switching REJ03G1599-0200 (Previous: ADE-208-805) Rev.2.00 Oct 23, 2007 Features Low on-resistance RDS = 2.7 typ. (VGS = 10 V, ID = 50 mA) RDS = 4.7 typ. (VGS = 4 V, ID = 20 mA) 4 V gate drive device. Small package (CMPAK) Outline RENESAS Package code: PTSP0003ZA-A(Package name: CMPAK R )D31. So

2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3374 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: Yfs = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK3371 Switching Regulator Applications Unit: mmFeatures Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK3373 Switching Regulator and DC/DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.) High forward transfer admittance: |Yfs| = 1.7 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vt

2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 1Characteristic Symbol Rating Unit3Gate-Drain voltage VGDO -20 V2Gate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storag

2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3370Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-938 (Z)1st. EditionMar. 2001Features Low on-resistanceRDS(on) = 6.0 m typ. 4 V gate drive device High speed switchingOutlineTO220CFMDG1231. Gate2. Drain3. SourceS2SK3370Absolute Maximum Ratings (Ta = 25C)Item Symbol Value UnitDrain to source voltage VDSS 60 VGate

isc N-Channel MOSFET Transistor 2SK3373FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3377-ZKFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3377FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3377-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid