2SK3378 Todos los transistores

 ..1. Size:141K  renesas
 2sk3378.pdf

2SK3378 Silicon N Channel MOS FET High Speed Switching REJ03G1599-0200 (Previous ADE-208-805) Rev.2.00 Oct 23, 2007 Features Low on-resistance RDS = 2.7 typ. (VGS = 10 V, ID = 50 mA) RDS = 4.7 typ. (VGS = 4 V, ID = 20 mA) 4 V gate drive device. Small package (CMPAK) Outline RENESAS Package code PTSP0003ZA-A (Package name CMPAK R ) D 3 1. So

 8.1. Size:187K  toshiba
 2sk3374.pdf

2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3374 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 4.0 (typ.) High forward transfer admittance Yfs = 0.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 8.2. Size:177K  toshiba
 2sk3371.pdf

2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSV) 2SK3371 Switching Regulator Applications Unit mm Features Low drain-source ON-resistance RDS (ON) = 6.4 (typ.) High forward transfer admittance Yfs = 0.85 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

 8.3. Size:177K  toshiba
 2sk3373.pdf

2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSV) 2SK3373 Switching Regulator and DC/DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 2.9 m (typ.) High forward transfer admittance Yfs = 1.7 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vt

 8.4. Size:153K  toshiba
 2sk3376tk.pdf

2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 Characteristic Symbol Rating Unit 3 Gate-Drain voltage VGDO -20 V 2 Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storag

 8.5. Size:151K  toshiba
 2sk3376tv.pdf

2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora

 8.6. Size:264K  renesas
 2sk3377-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:46K  hitachi
 2sk3370.pdf

2SK3370 Silicon N Channel MOS FET High Speed Power Switching ADE-208-938 (Z) 1st. Edition Mar. 2001 Features Low on-resistance RDS(on) = 6.0 m typ. 4 V gate drive device High speed switching Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3370 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate

 8.8. Size:286K  inchange semiconductor
 2sk3373.pdf

isc N-Channel MOSFET Transistor 2SK3373 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 3.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.9. Size:357K  inchange semiconductor
 2sk3377-zk.pdf

isc N-Channel MOSFET Transistor 2SK3377-ZK FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:354K  inchange semiconductor
 2sk3377.pdf

isc N-Channel MOSFET Transistor 2SK3377 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.11. Size:287K  inchange semiconductor
 2sk3377-z.pdf

isc N-Channel MOSFET Transistor 2SK3377-Z FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid