AP1332GEV-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP1332GEV-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 0.45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: SC75

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AP1332GEV-HF datasheet

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 ap1332gev-hf.pdf pdf_icon

AP1332GEV-HF

AP1332GEV-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mA S RoHS Compliant & Halogen-Free SC-75 G D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, low on-re

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 ap1332geu.pdf pdf_icon

AP1332GEV-HF

AP1332GEU-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 0.6 Small Package Outline ID3 600mA S RoHS Compliant & Halogen-Free SOT-323 G Description AP1332 series are from Advanced Power innovated design and D silicon process technology to achieve the

 6.2. Size:56K  ape
 ap1332geu-hf.pdf pdf_icon

AP1332GEV-HF

AP1332GEU-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Simple Gate Drive RDS(ON) 600m Small Package Outline ID 600mA S RoHS Compliant & Halogen-Free SOT-323 G Description Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, low on-res

 9.1. Size:57K  ape
 ap1334geu-hf.pdf pdf_icon

AP1332GEV-HF

AP1334GEU-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Capable of 1.8V Gate Drive RDS(ON) 50m Optimal DC/DC Battery Application ID 2.1A S Halogen Free & RoHS Compliant Product SOT-323 G D Description AP1334 series are from Advanced Power innovated design and G silicon process tech

MOSTRAR MÁS

Otros transistores... 2SK3290, 2SK3304, 2SK3307, 2SK3310, 2SK3314, 2SK3378, AP1203AGMT-HF, AP1332GEU-HF, AON6414A, AP1333GU, AP1334GEU-HF, AP13N50I-HF, AP13N50R-HF, AP13N50W, AP13P15GH-HF, AP13P15GJ-HF, AP13P15GP-HF