AP1332GEV-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP1332GEV-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: SC75

Búsqueda de reemplazo de MOSFET AP1332GEV-HF

AP1332GEV-HF Datasheet (PDF)

..1. Size:58K ape
ap1332gev-hf.pdf

AP1332GEV-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mAS RoHS Compliant & Halogen-FreeSC-75GDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, low on-re

6.1. Size:134K ape
ap1332geu.pdf

AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 0.6 Small Package Outline ID3 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAP1332 series are from Advanced Power innovated design andDsilicon process technology to achieve the

6.2. Size:56K ape
ap1332geu-hf.pdf

AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Simple Gate Drive RDS(ON) 600m Small Package Outline ID 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, low on-res

9.1. Size:57K ape
ap1334geu-hf.pdf

AP1334GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 1.8V Gate Drive RDS(ON) 50m Optimal DC/DC Battery Application ID 2.1AS Halogen Free & RoHS Compliant ProductSOT-323GDDescriptionAP1334 series are from Advanced Power innovated design andGsilicon process tech

9.2. Size:93K ape
ap1333gu.pdf

AP1333GURoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mASSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching, low on-resistance and cost-eff

9.3. Size:93K ape
ap1333gu-hf.pdf

AP1333GU-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switchi

9.4. Size:882K cn vbsemi
ap1333gu.pdf

AP1333GUwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

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