AP13N50R-HF Todos los transistores

 

 

AP13N50R-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP13N50R-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO262
 

 Búsqueda de reemplazo de AP13N50R-HF MOSFET

   - Selección ⓘ de transistores por parámetros

 

 

AP13N50R-HF Datasheet (PDF)

 ..1. Size:57K  ape
 ap13n50r-hf.pdf pdf_icon

AP13N50R-HF

AP13N50R-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedize

 6.1. Size:158K  ape
 ap13n50r.pdf pdf_icon

AP13N50R-HF

AP13N50R-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP13N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.1. Size:58K  ape
 ap13n50w.pdf pdf_icon

AP13N50R-HF

AP13N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance

 7.2. Size:96K  ape
 ap13n50i-hf.pdf pdf_icon

AP13N50R-HF

AP13N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedize

MOSTRAR MÁS

Otros transistores... 2SK3314 , 2SK3378 , AP1203AGMT-HF , AP1332GEU-HF , AP1332GEV-HF , AP1333GU , AP1334GEU-HF , AP13N50I-HF , 8205A , AP13N50W , AP13P15GH-HF , AP13P15GJ-HF , AP13P15GP-HF , AP13P15GS-HF , AP1430GEU6-HF , AP14S50S-HF , AP15N03GH-HF .

History: 5N50L-TF1-T

 

 
Back to Top

 


 
.