2SK3476 Todos los transistores

 ..1. Size:171K  toshiba
 2sk3476.pdf

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

 8.1. Size:230K  toshiba
 2sk3473.pdf

2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3473 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 6.5S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.2. Size:191K  toshiba
 2sk3472.pdf

2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK3472 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 4.0 m (typ.) High forward transfer admittance Yfs = 0.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 8.3. Size:157K  toshiba
 2sk3475.pdf

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

 8.4. Size:154K  toshiba
 2sk3471.pdf

2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 10 (typ.) High forward transfer admittance Yfs = 0.4 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V,

 8.5. Size:205K  renesas
 2sk3479-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:100K  fuji
 2sk3474-01.pdf

FUJI POWER MOSFET200303 2SK3474-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25 C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema

 8.7. Size:357K  inchange semiconductor
 2sk3479-z.pdf

isc N-Channel MOSFET Transistor 2SK3479-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.8. Size:287K  inchange semiconductor
 2sk3473.pdf

isc N-Channel MOSFET Transistor 2SK3473 FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:289K  inchange semiconductor
 2sk3479.pdf

isc N-Channel MOSFET Transistor 2SK3479 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.10. Size:354K  inchange semiconductor
 2sk3472.pdf

isc N-Channel MOSFET Transistor 2SK3472 FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 4.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:357K  inchange semiconductor
 2sk3479-zj.pdf

isc N-Channel MOSFET Transistor 2SK3479-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.12. Size:283K  inchange semiconductor
 2sk3479-s.pdf

isc N-Channel MOSFET Transistor 2SK3479-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen