2SK3481-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3481-Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO220SMD

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2SK3481-Z Datasheet (PDF)

..1. Size:357K inchange semiconductor
2sk3481-z.pdf

isc N-Channel MOSFET Transistor 2SK3481-ZFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

0.1. Size:357K inchange semiconductor
2sk3481-zj.pdf

isc N-Channel MOSFET Transistor 2SK3481-ZJFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

6.1. Size:283K inchange semiconductor
2sk3481-s.pdf

isc N-Channel MOSFET Transistor 2SK3481-SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

7.1. Size:76K nec
2sk3481.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3481SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3481 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3481 TO-220AB2SK3481-S TO-262FEATURES2SK3481-ZJ TO-263 Super low on-state resistance:2SK3481-Z TO-220SMDNoteRDS(on)1 = 50 m MAX.

7.2. Size:289K inchange semiconductor
2sk3481.pdf

isc N-Channel MOSFET Transistor 2SK3481FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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