2SK3485 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3485
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 33 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: PCP
Búsqueda de reemplazo de 2SK3485 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3485 datasheet
..1. Size:28K sanyo
2sk3485.pdf 
Ordering number ENN7180 2SK3485 N-Channel Silicon MOSFET 2SK3485 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SK3485] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximu
8.1. Size:31K sanyo
2sk3489.pdf
Ordering number ENN7316 2SK3489 N-Channel Silicon MOSFET 2SK3489 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switcing. 2062A 4V drive. [2SK3489] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate (Bottom view) 2 Drain 0.75 3 Source SANYO PCP Specifications Absolute Maximu
8.2. Size:30K sanyo
2sk3488.pdf
Ordering number ENN7181 2SK3481 N-Channel Silicon MOSFET 2SK3488 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3488] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum
8.3. Size:28K sanyo
2sk3486.pdf
Ordering number ENN7197 2SK3486 N-Channel Silicon MOSFET 2SK3486 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SK3486] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximu
8.4. Size:52K sanyo
2sk3487.pdf
Ordering number ENN8192 2SK3487 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3487 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 8 A Dr
8.5. Size:164K nec
2sk3483.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3483 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3483 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3483 TO-251 (MP-3) 2SK3483-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(
8.6. Size:144K nec
2sk3484.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3484 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3484 TO-251 (MP-3) 2SK3484-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 8 A) RDS(
8.7. Size:77K nec
2sk3480.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3480 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3480 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3480 TO-220AB 2SK3480-S TO-262 FEATURES 2SK3480-ZJ TO-263 Super low on-state resistance 2SK3480-Z TO-220SMDNote RDS(on)1 = 31 m MAX.
8.8. Size:165K nec
2sk3482.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3482 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3482 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3482 TO-251 (MP-3) 2SK3482-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(
8.9. Size:76K nec
2sk3481.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3481 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3481 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3481 TO-220AB 2SK3481-S TO-262 FEATURES 2SK3481-ZJ TO-263 Super low on-state resistance 2SK3481-Z TO-220SMDNote RDS(on)1 = 50 m MAX.
8.10. Size:1409K cn vbsemi
2sk3483-z.pdf
2SK3483-Z www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle
8.11. Size:756K cn vbsemi
2sk3484.pdf
2SK3484 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
8.12. Size:287K inchange semiconductor
2sk3483-z.pdf
isc N-Channel MOSFET Transistor 2SK3483-Z FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.13. Size:357K inchange semiconductor
2sk3484-zk.pdf
isc N-Channel MOSFET Transistor 2SK3484-ZK FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.14. Size:358K inchange semiconductor
2sk3483-zk.pdf
isc N-Channel MOSFET Transistor 2SK3483-ZK FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.15. Size:355K inchange semiconductor
2sk3483.pdf
isc N-Channel MOSFET Transistor 2SK3483 FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.16. Size:355K inchange semiconductor
2sk3484.pdf
isc N-Channel MOSFET Transistor 2SK3484 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.17. Size:288K inchange semiconductor
2sk3482-z.pdf
isc N-Channel MOSFET Transistor 2SK3482-Z FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.18. Size:290K inchange semiconductor
2sk3480.pdf
isc N-Channel MOSFET Transistor 2SK3480 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 31m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.19. Size:358K inchange semiconductor
2sk3480-zj.pdf
isc N-Channel MOSFET Transistor 2SK3480-ZJ FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 31m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.20. Size:357K inchange semiconductor
2sk3481-z.pdf
isc N-Channel MOSFET Transistor 2SK3481-Z FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.21. Size:355K inchange semiconductor
2sk3482.pdf
isc N-Channel MOSFET Transistor 2SK3482 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.22. Size:358K inchange semiconductor
2sk3480-z.pdf
isc N-Channel MOSFET Transistor 2SK3480-Z FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 31m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.23. Size:357K inchange semiconductor
2sk3481-zj.pdf
isc N-Channel MOSFET Transistor 2SK3481-ZJ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.24. Size:283K inchange semiconductor
2sk3480-s.pdf
isc N-Channel MOSFET Transistor 2SK3480-S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 31m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.25. Size:283K inchange semiconductor
2sk3481-s.pdf
isc N-Channel MOSFET Transistor 2SK3481-S FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.26. Size:289K inchange semiconductor
2sk3481.pdf
isc N-Channel MOSFET Transistor 2SK3481 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.27. Size:287K inchange semiconductor
2sk3484-z.pdf
isc N-Channel MOSFET Transistor 2SK3484-Z FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
Otros transistores... 2SK3481-ZJ, 2SK3481-Z, 2SK3482, 2SK3482-Z, 2SK3483, 2SK3483-Z, 2SK3484, 2SK3484-Z, 2SK3568, 2SK3486, 2SK3487, 2SK3488, 2SK3489, 2SK3491, 2SK3494, 2SK3495, 2SK3528
