2SK3560 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3560
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 230 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 37 nS
Cossⓘ - Capacitancia de salida: 356 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: TO220CG1
Búsqueda de reemplazo de 2SK3560 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3560 datasheet
..1. Size:76K panasonic
2sk3560.pdf 
Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit mm 4.6 0.2 10.5 0.3 1.4 0.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.4 0.1 High avalanche resistance 2.5 0.2 0.8 0.1 2.54 0.3 0 to 0.3 Absolute Maximum Ratings TC = 25 C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gat
8.1. Size:214K toshiba
2sk3566.pdf
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3566 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 5.6 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol
8.2. Size:227K toshiba
2sk3565.pdf
2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3565 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma
8.3. Size:233K toshiba
2sk3569.pdf
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3569 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso
8.4. Size:227K toshiba
2sk3561.pdf
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3561 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 6.5S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings
8.5. Size:223K toshiba
2sk3567.pdf
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3567 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 2.5S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.6. Size:248K toshiba
2sk3564.pdf
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3564 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.7 (typ.) High forward transfer admittance Yfs = 2.6 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.7. Size:348K toshiba
2sk3563.pdf
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3563 unit Switching Regulator Applications 10 0.3 2.7 0.2 3.2 0.2 Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 3.5S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement-mode Vth = 2
8.8. Size:245K toshiba
2sk3568.pdf
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3568 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 8.5S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.9. Size:232K toshiba
2sk3562.pdf
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3562 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.0S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (
8.11. Size:225K inchange semiconductor
2sk3566.pdf
isc N-Channel MOSFET Transistor 2SK3566 I2SK3566 FEATURES Low drain-source on-resistance RDS(on) 6.4 . Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.12. Size:237K inchange semiconductor
2sk3565.pdf
iscN-Channel MOSFET Transistor 2SK3565 I2SK3565 FEATURES Low drain-source on-resistance RDS(ON) =2.0 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.13. Size:214K inchange semiconductor
2sk3569.pdf
isc N-Channel MOSFET Transistor 2SK3569 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V D
8.14. Size:279K inchange semiconductor
2sk3561.pdf
isc N-Channel MOSFET Transistor 2SK3561 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.15. Size:280K inchange semiconductor
2sk3567.pdf
isc N-Channel MOSFET Transistor 2SK3567 FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.16. Size:236K inchange semiconductor
2sk3564.pdf
iscN-Channel MOSFET Transistor 2SK3564 I2SK3564 FEATURES Low drain-source on-resistance RDS(ON) = 3.7 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
8.17. Size:279K inchange semiconductor
2sk3563.pdf
isc N-Channel MOSFET Transistor 2SK3563 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.18. Size:253K inchange semiconductor
2sk3568.pdf
isc N-Channel MOSFET Transistor 2SK3568 FEATURES Drain-source on-resistance RDS(on) 0.52 @10V Low leakage current IDSS
8.19. Size:279K inchange semiconductor
2sk3562.pdf
isc N-Channel MOSFET Transistor 2SK3562 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
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