AP16N50W Todos los transistores

 

AP16N50W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP16N50W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3P
 

 Búsqueda de reemplazo de AP16N50W MOSFET

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AP16N50W datasheet

 ..1. Size:58K  ape
ap16n50w.pdf pdf_icon

AP16N50W

AP16N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 0.1. Size:59K  ape
ap16n50w-hf.pdf pdf_icon

AP16N50W

AP16N50W-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 7.1. Size:151K  ape
ap16n50p.pdf pdf_icon

AP16N50W

AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description AP16N50 series are from Advanced Power innovated

 7.2. Size:58K  ape
ap16n50i-hf.pdf pdf_icon

AP16N50W

AP16N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

Otros transistores... 2SK3528 , 2SK3532 , 2SK3560 , AP15T20AGH-HF , AP15T20GH-HF , AP15T20GI-HF , AP15T20GS-HF , AP16N50I-HF , AO3400A , AP18N20AGS-HF , AP18N20GH-HF , AP18N20GI , AP18N20GJ-HF , AP18N20GP-HF , AP18N20GS-HF , AP18N50W , AP18P10AGH-HF .

 

 

 


 
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