AP18P10GH Todos los transistores

 

AP18P10GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18P10GH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO252
 

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AP18P10GH Datasheet (PDF)

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AP18P10GH

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r

 0.1. Size:102K  ape
 ap18p10gh-hf ap18p10gj-hf.pdf pdf_icon

AP18P10GH

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 6.1. Size:169K  ape
 ap18p10gm.pdf pdf_icon

AP18P10GH

AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are

 6.2. Size:172K  ape
 ap18p10gk.pdf pdf_icon

AP18P10GH

AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design andsilicon process technology to

MOSTRAR MÁS

Otros transistores... AP18N20GH-HF , AP18N20GI , AP18N20GJ-HF , AP18N20GP-HF , AP18N20GS-HF , AP18N50W , AP18P10AGH-HF , AP18P10AGJ-HF , 8N60 , AP18P10GJ , AP18P10GI , AP18P10GK-HF , AP18P10GM-HF , AP18P10GS , AP18T10AGH-HF , AP18T10AGJ-HF , AP18T10AGK-HF .

History: BSZ035N03LSG | 2SK3506 | BSZ100N03MSG

 

 
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