2SK367 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK367
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 3.5 V
|Id|ⓘ - Corriente continua
de drenaje: 0.0065 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 700 Ohm
Encapsulados: 2-4E1B
Búsqueda de reemplazo de 2SK367 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK367 datasheet
0.1. Size:209K 1
2sk3670.pdf 
2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3670 Chopper Regulator and DC-DC Converter Applications Unit mm 2.5V-Gate Drive Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 150 V) Enhancement mode Vth = 0.5 1.3 V (VDS
0.2. Size:111K fuji
2sk3677-01mr.pdf
2SK3677-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.3. Size:113K fuji
2sk3673-01mr.pdf
2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.4. Size:264K fuji
2sk3676-01l-01s-01sj.pdf
2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.5. Size:270K fuji
2sk3674-01l-s-sj.pdf
2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.6. Size:116K fuji
2sk3679-01mr.pdf
2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.7. Size:114K fuji
2sk3678-01.pdf
2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle
0.8. Size:119K fuji
2sk3675-01.pdf
2SK3675-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching 11.6 0.2 Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.9. Size:357K inchange semiconductor
2sk3674-01s.pdf
isc N-Channel MOSFET Transistor 2SK3674-01S FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.10. Size:256K inchange semiconductor
2sk3677-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3677-01MR FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
0.11. Size:280K inchange semiconductor
2sk3673-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3673-01MR FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
0.12. Size:283K inchange semiconductor
2sk3674-01l.pdf
isc N-Channel MOSFET Transistor 2SK3674-01L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.13. Size:357K inchange semiconductor
2sk3676-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3676-01SJ FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
0.14. Size:357K inchange semiconductor
2sk3676-01s.pdf
isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.15. Size:280K inchange semiconductor
2sk3679-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3679-01MR FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.58 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
0.16. Size:357K inchange semiconductor
2sk3674-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3674-01SJ FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
0.17. Size:290K inchange semiconductor
2sk3678-01.pdf
isc N-Channel MOSFET Transistor 2SK3678-01 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.58 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.18. Size:346K inchange semiconductor
2sk3675-01.pdf
isc N-Channel MOSFET Transistor 2SK3675-01 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
0.19. Size:283K inchange semiconductor
2sk3676-01l.pdf
isc N-Channel MOSFET Transistor 2SK3676-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
Otros transistores... 2SK359, 2SK360, 2SK3611, 2SK3614, 2SK3656, 2SK3663, 2SK3664, 2SK3668, AO3400, 2SK368, 2SK3702, 2SK373, 2SK374, 2SK3740, 2SK3743, 2SK3749, 2SK3756
