2SK373 Todos los transistores

 ..1. Size:313K  toshiba
 2sk373.pdf

2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Unit mm Applications High breakdown voltage VGDS = -100 V (min) High input impedance I = -1.0 nA (max) (V = -80 V) GSS GS Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -100 V Gate

 0.1. Size:85K  renesas
 2sk3736.pdf

2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain

 0.2. Size:98K  renesas
 rej03g0525 2sk3736ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.3. Size:375K  onsemi
 2sk3738.pdf

Ordering number EN7671A 2SK3738 N-Channel JFET http //onsemi.com 40V, 50 to 130 A, 0.13mS, SMCP Applications Impedance conversion Infrared sensor Features Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltag

 0.4. Size:1068K  fuji
 2sk3730-01mr.pdf

 0.5. Size:42K  kexin
 2sk3731.pdf

SMD Type IC SMD Type Transistors N-channel enhancement mode MOSFET 2SK3731 TO-263 Unit mm +0.2 4.57-0.2 Features 1.27+0.1 -0.1 Low on-resistance, low Qg High avalanche resistance For high-speed switching 0.1max 1.27+0.1 -0.1 +0.1 0.81-0.1 2.54 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.08-0.1 0.4-0.2 2Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 0.6. Size:279K  inchange semiconductor
 2sk3730-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3730-01MR FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 0.7. Size:289K  inchange semiconductor
 2sk3736.pdf

isc N-Channel MOSFET Transistor 2SK3736 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @ V = 4V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi