AP2301N-HF Todos los transistores

 

AP2301N-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2301N-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT23
 

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AP2301N-HF Datasheet (PDF)

 ..1. Size:59K  ape
 ap2301n-hf.pdf pdf_icon

AP2301N-HF

AP2301N-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switchi

 7.1. Size:868K  cn vbsemi
 ap2301n.pdf pdf_icon

AP2301N-HF

AP2301Nwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 8.1. Size:93K  ape
 ap2301agn.pdf pdf_icon

AP2301N-HF

AP2301AGNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97mD Surface Mount Device ID - 3.3ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effec

 8.2. Size:56K  ape
 ap2301agn-hf.pdf pdf_icon

AP2301N-HF

AP2301AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,l

MOSTRAR MÁS

Otros transistores... AP20T15GH-HF , AP20T15GI-HF , AP20T15GP-HF , AP22N13GH-HF , AP22T03GH-HF , AP2301AGN-HF , AP2301BGN-HF , AP2301GN-HF , IRF530 , AP2302AGN-HF , AP2302GN-HF , AP2303GN-HF , AP2304AGN-HF , AP2304GN-HF , AP2305AGN-HF , AP2305BGN-HF , AP2305CGN-HF .

History: FDD2612 | PMV40UN2 | CS4N70P | AP6N3R5LI | AFN4906

 

 
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