AP2303GN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2303GN-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.2 nS

Cossⓘ - Capacitancia de salida: 130.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: SOT23

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AP2303GN-HF datasheet

 ..1. Size:94K  ape
ap2303gn-hf.pdf pdf_icon

AP2303GN-HF

AP2303GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 240m D Surface Mount Device ID - 1.9A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.1. Size:94K  ape
ap2303gn.pdf pdf_icon

AP2303GN-HF

AP2303GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 240m D Surface Mount Device ID - 1.9A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effect

 9.1. Size:96K  ape
ap2302gn-hf.pdf pdf_icon

AP2303GN-HF

AP2302GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS Compliant S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistanc

 9.2. Size:94K  ape
ap2309agn-hf.pdf pdf_icon

AP2303GN-HF

AP2309AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.4A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Otros transistores... AP22N13GH-HF, AP22T03GH-HF, AP2301AGN-HF, AP2301BGN-HF, AP2301GN-HF, AP2301N-HF, AP2302AGN-HF, AP2302GN-HF, IRF530, AP2304AGN-HF, AP2304GN-HF, AP2305AGN-HF, AP2305BGN-HF, AP2305CGN-HF, AP2305GN-HF, AP2305N-HF, AP2306AGEN-HF