AP2306GN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2306GN-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 144 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOT23

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AP2306GN-HF datasheet

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 ap2306gn-hf.pdf pdf_icon

AP2306GN-HF

AP2306GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 35m D Surface mount package ID 5.3A RoHS Compliant S D SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible on-resistance, extre

 8.1. Size:93K  ape
 ap2306cgn-hf.pdf pdf_icon

AP2306GN-HF

AP2306CGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 30m D Surface mount package ID 5.5A RoHS Compliant S D SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on-resistance, extr

 8.2. Size:95K  ape
 ap2306agen-hf.pdf pdf_icon

AP2306GN-HF

AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res

 8.3. Size:179K  ape
 ap2306agen.pdf pdf_icon

AP2306GN-HF

AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res

MOSTRAR MÁS

Otros transistores... AP2305BGN-HF, AP2305CGN-HF, AP2305GN-HF, AP2305N-HF, AP2306AGEN-HF, AP2306AGN-HF, AP2306CGN-HF, AP2306CGTN-HF, 2SK3568, AP2307GN-HF, 2SK3779-01R, 2SK3793, 2SK3794, 2SK3794-Z, 2SK385, 2SK386, 2SK3863