2SK3793 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3793
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 20 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1.5 V
Carga de la puerta (Qg): 21 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 0.089 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET 2SK3793
2SK3793 Datasheet (PDF)
2sk3793.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3793SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3793 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3793 Isolated TO-220 FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A)
2sk3793.pdf
isc N-Channel MOSFET Transistor 2SK3793FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3797.pdf
2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3797 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute
2sk3799.pdf
2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Y | = 6.0 S (typ.) fs Low leakage current : I = 100A (max) (V = 720 V) DSS DS Enhancement model : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS DMax
2sk3798.pdf
2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3798 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings
2sk3794.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3794SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. TO-251 (MP-3) 2SK3794 TO-252 (MP-3Z) 2SK3794-Z FEATURES Low On-state resistance (TO-251) RDS(on)1 = 44 m MAX. (VGS = 10
2sk3796.pdf
Ordering number : EN8636B2SK3796N-Channel JFEThttp://onsemi.com30V, 0.6 to 3.0mA, 6.5mS, SMCPApplications Low-frequency general-purpose amplifier, impedance conversion, analog switches applicationsFeatures Small IGSS Small CissSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSX 30 VGate-to-Dr
2sk3797.pdf
isc N-Channel MOSFET Transistor 2SK3797FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3799.pdf
isc N-Channel MOSFET Transistor 2SK3799I2SK3799FEATURESLow drain-source on-resistance:RDS(on) 1.3.Enhancement mode:Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sk3798.pdf
isc N-Channel MOSFET Transistor 2SK3798I2SK3798FEATURESLow drain-source on-resistance:RDS(on) 3.5.Enhancement mode:Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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