2SK386 Todos los transistores

 ..1. Size:41K  no
 2sk386.pdf

 ..2. Size:284K  inchange semiconductor
 2sk386.pdf

isc N-Channel MOSFET Transistor 2SK386 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.1. Size:250K  toshiba
 2sk3869.pdf

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3869 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.55 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

 0.2. Size:297K  toshiba
 2sk3863.pdf

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3863 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 2.8S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

 0.3. Size:234K  toshiba
 2sk3868.pdf

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3868 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R

 0.4. Size:196K  toshiba
 2sk3864.pdf

2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit mm Switching Regulator Applications Low drain-source ON resistance RDS (ON) = 20 m (typ.) High forward transfer admittance Yfs = 75 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 120 V) Enhancement mode Vth = 2.0 4.0 V

 0.5. Size:280K  inchange semiconductor
 2sk3869.pdf

isc N-Channel MOSFET Transistor 2SK3869 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.68 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.6. Size:286K  inchange semiconductor
 2sk3863.pdf

isc N-Channel MOSFET Transistor 2SK3863 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.7. Size:279K  inchange semiconductor
 2sk3868.pdf

isc N-Channel MOSFET Transistor 2SK3868 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid