2SK386 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK386
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: 2-21F1B

Búsqueda de reemplazo de MOSFET 2SK386

2SK386 Datasheet (PDF)

..1. Size:41K no
2sk386.pdf

..2. Size:284K inchange semiconductor
2sk386.pdf

isc N-Channel MOSFET Transistor 2SK386FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

0.1. Size:250K toshiba
2sk3869.pdf

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

0.2. Size:297K toshiba
2sk3863.pdf

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

0.3. Size:234K toshiba
2sk3868.pdf

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R

0.4. Size:196K toshiba
2sk3864.pdf

2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit: mmSwitching Regulator Applications Low drain-source ON resistance: RDS (ON) = 20 m (typ.) High forward transfer admittance: |Yfs| = 75 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 120 V) Enhancement mode: Vth = 2.0~4.0 V

0.5. Size:280K inchange semiconductor
2sk3869.pdf

isc N-Channel MOSFET Transistor 2SK3869FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.68(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.6. Size:286K inchange semiconductor
2sk3863.pdf

isc N-Channel MOSFET Transistor 2SK3863FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.7. Size:279K inchange semiconductor
2sk3868.pdf

isc N-Channel MOSFET Transistor 2SK3868FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: