AP2309GEN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2309GEN-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0413 Ohm
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
AP2309GEN-HF Datasheet (PDF)
ap2309gen-hf.pdf

AP2309GEN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve
ap2309gen.pdf

AP2309GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap2309gn.pdf

AP2309GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance andGcost-effect
ap2309gn-hf.pdf

AP2309GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistanc
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: HAT1040T | KP737A | IXFN100N10S1 | SSF7504A7 | IRF8852 | IRFU9120N | SMG2336N
History: HAT1040T | KP737A | IXFN100N10S1 | SSF7504A7 | IRF8852 | IRFU9120N | SMG2336N



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent | 2sc4834 | 2sd313 transistor equivalent | 2sc871 replacement | a872 transistor