AP2313GN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2313GN-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT23

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AP2313GN-HF datasheet

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 ap2313gn-hf.pdf pdf_icon

AP2313GN-HF

AP2313GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, l

 6.1. Size:57K  ape
 ap2313gn.pdf pdf_icon

AP2313GN-HF

AP2313GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiven

 8.1. Size:1715K  cn apm
 ap2313mi.pdf pdf_icon

AP2313GN-HF

AP2313MI -12V P-Channel Enhancement Mode MOSFET Description The AP2313MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-8A DS D R

 9.1. Size:56K  ape
 ap2310gg-hf.pdf pdf_icon

AP2313GN-HF

AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S rug

MOSTRAR MÁS

Otros transistores... AP2310AGN-HF, AP2310CGN-HF, AP2310GG-HF, AP2310GK-HF, AP2310GN-HF, AP2311GK-HF, AP2311GN-HF, AP2312GN, RU7088R, AP2314GN-HF, AP2315GEN, AP2316GN-HF, AP2317GN-HF, AP2318AGEN-HF, AP2318GEN-HF, AP2319GN-HF, AP2321GN-HF