AP2315GEN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2315GEN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 0.84 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de AP2315GEN MOSFET

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AP2315GEN datasheet

 ..1. Size:68K  ape
 ap2315gen.pdf pdf_icon

AP2315GEN

AP2315GEN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 1.25 Surface Mount Device ID - 840mA S G SOT-23 Description Advanced Power MOSFETs from APEC provide the designer D with the best combination of fast switching, low on-resistance and cost-effec

 9.1. Size:56K  ape
 ap2310gg-hf.pdf pdf_icon

AP2315GEN

AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S rug

 9.2. Size:99K  ape
 ap2319gn-hf.pdf pdf_icon

AP2315GEN

AP2319GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 90m D Surface Mount Device ID -3.1A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, l

 9.3. Size:57K  ape
 ap2313gn.pdf pdf_icon

AP2315GEN

AP2313GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiven

MOSTRAR MÁS

Otros transistores... AP2310GG-HF, AP2310GK-HF, AP2310GN-HF, AP2311GK-HF, AP2311GN-HF, AP2312GN, AP2313GN-HF, AP2314GN-HF, AOD4184A, AP2316GN-HF, AP2317GN-HF, AP2318AGEN-HF, AP2318GEN-HF, AP2319GN-HF, AP2321GN-HF, AP2323GN-HF, AP2324GN-HF