AP2318AGEN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2318AGEN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 0.54 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET AP2318AGEN-HF

AP2318AGEN-HF Datasheet (PDF)

..1. Size:59K ape
ap2318agen-hf.pdf

AP2318AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mAS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on

8.1. Size:97K ape
ap2318gen-hf.pdf

AP2318GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS CompliantSOT-23 GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extrem

8.2. Size:148K ape
ap2318gen.pdf

AP2318GENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

8.3. Size:149K ape
ap2318ben.pdf

AP2318BENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318B series are from Advanced Power innovated design and siliconGprocess technology to achiev

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: