AP2318GEN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2318GEN-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44 nS

Cossⓘ - Capacitancia de salida: 12 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: SOT23

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AP2318GEN-HF datasheet

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 ap2318gen-hf.pdf pdf_icon

AP2318GEN-HF

AP2318GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extrem

 5.1. Size:148K  ape
 ap2318gen.pdf pdf_icon

AP2318GEN-HF

AP2318GEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318 series are from Advanced Power innovated design and silicon G process technology to achieve t

 8.1. Size:59K  ape
 ap2318agen-hf.pdf pdf_icon

AP2318GEN-HF

AP2318AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mA S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on

 8.2. Size:149K  ape
 ap2318ben.pdf pdf_icon

AP2318GEN-HF

AP2318BEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30V D Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318B series are from Advanced Power innovated design and silicon G process technology to achiev

MOSTRAR MÁS

Otros transistores... AP2311GN-HF, AP2312GN, AP2313GN-HF, AP2314GN-HF, AP2315GEN, AP2316GN-HF, AP2317GN-HF, AP2318AGEN-HF, AO4468, AP2319GN-HF, AP2321GN-HF, AP2323GN-HF, AP2324GN-HF, AP2325GEN-HF, AP2326GN-HF, AP2327GN-HF, AP2328GN-HF