AP2318GEN-HF Todos los transistores

 

AP2318GEN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2318GEN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 44 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: SOT23
 

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AP2318GEN-HF Datasheet (PDF)

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 ap2318gen-hf.pdf pdf_icon

AP2318GEN-HF

AP2318GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS CompliantSOT-23 GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extrem

 5.1. Size:148K  ape
 ap2318gen.pdf pdf_icon

AP2318GEN-HF

AP2318GENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

 8.1. Size:59K  ape
 ap2318agen-hf.pdf pdf_icon

AP2318GEN-HF

AP2318AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mAS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on

 8.2. Size:149K  ape
 ap2318ben.pdf pdf_icon

AP2318GEN-HF

AP2318BENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318B series are from Advanced Power innovated design and siliconGprocess technology to achiev

MOSTRAR MÁS

Otros transistores... AP2311GN-HF , AP2312GN , AP2313GN-HF , AP2314GN-HF , AP2315GEN , AP2316GN-HF , AP2317GN-HF , AP2318AGEN-HF , IRFP064N , AP2319GN-HF , AP2321GN-HF , AP2323GN-HF , AP2324GN-HF , AP2325GEN-HF , AP2326GN-HF , AP2327GN-HF , AP2328GN-HF .

History: RFM10N12 | IRFS9133 | IRFHM3911 | FDFMA3N109 | VBQG7313 | 2SK386 | IRFH5010PBF

 

 
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