AP2319GN-HF Todos los transistores

 

AP2319GN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2319GN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT23
 

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AP2319GN-HF Datasheet (PDF)

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ap2319gn-hf.pdf pdf_icon

AP2319GN-HF

AP2319GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 90mD Surface Mount Device ID -3.1A RoHS Compliant & Halogen-FreeSSOT-23 GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,l

 9.1. Size:56K  ape
ap2310gg-hf.pdf pdf_icon

AP2319GN-HF

AP2310GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Srug

 9.2. Size:57K  ape
ap2313gn.pdf pdf_icon

AP2319GN-HF

AP2313GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5ASSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching, low on-resistance and cost-effectiven

 9.3. Size:59K  ape
ap2318agen-hf.pdf pdf_icon

AP2319GN-HF

AP2318AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mAS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on

Otros transistores... AP2312GN , AP2313GN-HF , AP2314GN-HF , AP2315GEN , AP2316GN-HF , AP2317GN-HF , AP2318AGEN-HF , AP2318GEN-HF , BS170 , AP2321GN-HF , AP2323GN-HF , AP2324GN-HF , AP2325GEN-HF , AP2326GN-HF , AP2327GN-HF , AP2328GN-HF , AP2329GN-HF .

History: BSS119N

 

 
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