AP2323GN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2323GN-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 14.5 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AP2323GN-HF
AP2323GN-HF Datasheet (PDF)
ap2323gn-hf.pdf
AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low
ap2323gn.pdf
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ap2323agn.pdf
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ap2328gn-hf.pdf
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ap2326gn.pdf
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ap2321gn-hf.pdf
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ap2329gn-hf.pdf
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ap2326gn-hf.pdf
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ap2320gn.pdf
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ap2325gen.pdf
AP2325GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,
ap2322gn.pdf
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ap2320n-hf.pdf
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ap2321gn.pdf
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ap2322gn-hf.pdf
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ap2325geu6-hf.pdf
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ap2320gn-hf.pdf
AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist
ap2324gn-hf.pdf
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ap2325gen-hf.pdf
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ap2327gn-hf.pdf
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ap2328gn.pdf
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ap2322gn-3.pdf
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ap2322gn.pdf
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ap2321gn.pdf
AP2321GNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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