AP2323GN-HF Todos los transistores

 

AP2323GN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2323GN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: SOT23
 

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AP2323GN-HF Datasheet (PDF)

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 ap2323gn-hf.pdf pdf_icon

AP2323GN-HF

AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

 6.1. Size:181K  ape
 ap2323gn.pdf pdf_icon

AP2323GN-HF

AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

 8.1. Size:179K  ape
 ap2323agn.pdf pdf_icon

AP2323GN-HF

AP2323AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAP2323A series are from Advanced Power innovated design andsilicon process technology to achieve the

 9.1. Size:94K  ape
 ap2328gn-hf.pdf pdf_icon

AP2323GN-HF

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

MOSTRAR MÁS

Otros transistores... AP2314GN-HF , AP2315GEN , AP2316GN-HF , AP2317GN-HF , AP2318AGEN-HF , AP2318GEN-HF , AP2319GN-HF , AP2321GN-HF , IRF3205 , AP2324GN-HF , AP2325GEN-HF , AP2326GN-HF , AP2327GN-HF , AP2328GN-HF , AP2329GN-HF , AP2330GN-HF , AP2331GN-HF .

 

 
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