AP2428GEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2428GEY Datasheet (PDF)

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ap2428gey.pdf pdf_icon

AP2428GEYPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30VD2D2 Lower on-resistance RDS(ON) 27mD1D1G2 Surface mount package ID 5.9AS2 RoHS compliant G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized

7.1. Size:173K ape
ap2428gn3.pdf pdf_icon

AP2428GN3RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2D2 Bottom Exposed DFN BVDSS 30VD1D1 Low On-resistance RDS(ON) 27m Lower Profile ID 5.5AS2G2S1DFN3*3G1D2 D1D1 D2G1 G2S1 S2Absolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage 30 VVGS Gate-Source Voltage 10 VI

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ap2426gey-hf.pdf pdf_icon

AP2426GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 26.5mG2 Surface Mount Package ID 6AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

9.2. Size:115K ape
ap2422gy.pdf pdf_icon

AP2422GYRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30VD2D2 Lower on-resistance RDS(ON) 40mD1D1G2 Surface mount package ID 4.8AS2G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible on-resistance, ex

Otros transistores... AP2334GN-HF , AP2338GN-HF , AP2342GK-HF , AP2344GEN-HF , AP2344GN-HF , AP2348GN-HF , AP2422GY , AP2426GEY-HF , IRFB4110 , AP2428GN3 , AP2430GN3-HF , AP2434GN3-HF , 2SK4037 , 2SK404 , 2SK4042 , 2SK410 , 2SK413 .