2SK4037 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK4037
   Código: UE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 3 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: 2-5N1A

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2SK4037 Datasheet (PDF)

..1. Size:194K toshiba
2sk4037.pdf

2SK4037 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK4037 470 MHz Band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this doc

8.1. Size:173K 1
2sk4034.pdf

2SK4034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK4034 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 4.2 m(typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 100 A (VDS = 60 V) Enhancement mode: Vth = 1.5 to

8.2. Size:260K toshiba
2sk4033.pdf

2SK4033 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4033 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.07 (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : V

8.3. Size:274K renesas
2sk4035.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. Size:247K hitachi
2sk402 2sk403.pdf

"2SK402""2SK402""2SK402"

8.5. Size:286K inchange semiconductor
2sk4033.pdf

isc N-Channel MOSFET Transistor 2SK4033FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.6. Size:235K inchange semiconductor
2sk403.pdf

isc N-Channel MOSFET Transistor 2SK403DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.High Cutoff frequency.No secondary breakdown.Suitable for switching reg

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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