2SK410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 180 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: RFPAK-A

Búsqueda de reemplazo de MOSFET 2SK410

2SK410 Datasheet (PDF)

..1. Size:50K hitachi
2sk410.pdf

2SK410Silicon N-Channel MOS FETApplicationHF/VHF power amplifierFeatures High breakdown voltage You can decrease handling current. Included gate protection diode No secondarybreakdown Wide area of safe operation Simple bias circuitry No thermal runawayOutline2SK410Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to sourc

0.1. Size:206K toshiba
2sk4104.pdf

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4104 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

0.2. Size:175K toshiba
2sk4106.pdf

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

0.3. Size:199K toshiba
2sk4105.pdf

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4105 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

0.4. Size:281K toshiba
2sk4108.pdf

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 21 (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

0.5. Size:296K toshiba
2sk4103.pdf

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4103 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

0.6. Size:239K toshiba
2sk4107.pdf

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4107 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

0.7. Size:45K sanyo
2sk4101ls.pdf

Ordering number : ENA0745 2SK4101LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4101LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specification

0.8. Size:97K sanyo
2sk4100ls.pdf

www.DataSheet4U.comOrdering number : ENA0778 2SK4100LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4100LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guaran

0.9. Size:279K inchange semiconductor
2sk4101ls.pdf

isc N-Channel MOSFET Transistor 2SK4101LSFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

0.10. Size:279K inchange semiconductor
2sk4100ls.pdf

isc N-Channel MOSFET Transistor 2SK4100LSFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.35(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

0.11. Size:286K inchange semiconductor
2sk4108.pdf

isc N-Channel MOSFET Transistor 2SK4108FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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