2SK415 Todos los transistores

 ..1. Size:56K  hitachi
 2sk415.pdf

 ..2. Size:234K  inchange semiconductor
 2sk415.pdf

isc N-Channel MOSFET Transistor 2SK415 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage,high speed power Switching . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE

 0.1. Size:95K  renesas
 rej03g1901 2sk4151ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:82K  renesas
 rej03g1909 2sk4150ds.pdf

Preliminary Datasheet 2SK4150 REJ03G1909-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 27, 2010 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25 C) Outline RENESAS Package code PRSS0003DA-A (Package name TO-92(1)) D 1. Source 2. Drain G 3. Gate

 9.1. Size:57K  1
 2sk4123ls.pdf

Ordering number ENA0826A 2SK4123LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4123LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.2. Size:55K  1
 2sk4179.pdf

Ordering number ENA1269 2SK4179 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4179 Applications Features Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Gate-to-S

 9.3. Size:226K  1
 2sk412.pdf

 9.4. Size:228K  1
 2sk4145.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 42 A) Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER LEAD PLATING

 9.5. Size:57K  1
 2sk4122ls.pdf

Ordering number ENA0825A 2SK4122LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4122LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.6. Size:56K  1
 2sk4121ls.pdf

Ordering number ENA0824A 2SK4121LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4121LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.7. Size:57K  1
 2sk4120ls.pdf

Ordering number ENA0823A 2SK4120LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4120LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.8. Size:240K  toshiba
 2sk4111.pdf

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4111 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 8.5S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 9.9. Size:343K  toshiba
 2sk4115.pdf

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOS ) 2SK4115 Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V

 9.10. Size:206K  toshiba
 2sk4104.pdf

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4104 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 9.11. Size:175K  toshiba
 2sk4106.pdf

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4106 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

 9.12. Size:202K  toshiba
 2sk4110.pdf

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4110 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

 9.13. Size:199K  toshiba
 2sk4105.pdf

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4105 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 9.14. Size:210K  toshiba
 2sk4113.pdf

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 9.15. Size:210K  toshiba
 2sk4112.pdf

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4112 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 5.5S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 9.16. Size:281K  toshiba
 2sk4108.pdf

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4108 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 21 (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

 9.17. Size:41K  toshiba
 2sk417.pdf

 9.18. Size:296K  toshiba
 2sk4103.pdf

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK4103 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 2.8S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

 9.19. Size:162K  toshiba
 2sk4114.pdf

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK4114 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

 9.20. Size:239K  toshiba
 2sk4107.pdf

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4107 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 33 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

 9.21. Size:270K  sanyo
 2sk4193ls.pdf

2SK4193LS Ordering number ENA1371 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4193LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.22. Size:66K  sanyo
 2sk4124.pdf

Ordering number ENA0746A 2SK4124 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4124 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi

 9.23. Size:66K  sanyo
 2sk4126.pdf

Ordering number ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4126 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi

 9.24. Size:52K  sanyo
 2sk4118ls.pdf

Ordering number ENA0829 2SK4118LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4118LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.25. Size:55K  sanyo
 2sk4195ls.pdf

Ordering number ENA1232 2SK4195LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4195LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.26. Size:271K  sanyo
 2sk4194ls.pdf

2SK4194LS Ordering number ENA1372 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4194LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.27. Size:159K  sanyo
 2sk4198ls.pdf

2SK4198LS Ordering number ENA1171A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198LS Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF(typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Uni

 9.28. Size:45K  sanyo
 2sk4101ls.pdf

Ordering number ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specification

 9.29. Size:52K  sanyo
 2sk4119ls.pdf

Ordering number ENA0830 2SK4119LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4119LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.30. Size:97K  sanyo
 2sk4100ls.pdf

www.DataSheet4U.com Ordering number ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4100LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guaran

 9.31. Size:94K  sanyo
 2sk4171.pdf

Ordering number ENA0787 2SK4171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4171 Applications Features Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Sour

 9.32. Size:66K  sanyo
 2sk4125.pdf

Ordering number ENA0747A 2SK4125 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4125 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi

 9.33. Size:68K  sanyo
 2sk4197ls.pdf

Ordering number ENA1223 2SK4197LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.34. Size:267K  sanyo
 2sk4181-tl-e.pdf

Ordering number ENA0999 2SK4181 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4181 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. For use of lighting & etc. High-density mounting. Specifications A

 9.35. Size:267K  sanyo
 2sk4197fs.pdf

2SK4197FS Ordering number ENA1368A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FS Applications Features High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source

 9.36. Size:270K  sanyo
 2sk4116ls.pdf

Ordering number ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.37. Size:271K  sanyo
 2sk4177.pdf

Ordering number ENA0869 2SK4177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4177 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit

 9.38. Size:271K  sanyo
 2sk4192ls.pdf

2SK4192LS Ordering number ENA1413 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4192LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.39. Size:58K  sanyo
 2sk4191ls.pdf

Ordering number ENA1206 2SK41911LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4191LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.40. Size:66K  sanyo
 2sk4196ls.pdf

Ordering number ENA1233 2SK4196LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4196LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.41. Size:270K  sanyo
 2sk4117ls.pdf

Ordering number ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.42. Size:269K  sanyo
 2sk4199ls.pdf

2SK4199LS Ordering number ENA1332 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4199LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.43. Size:267K  sanyo
 2sk4198fs.pdf

2SK4198FS Ordering number ENA1370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198FS Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Un

 9.44. Size:324K  sanyo
 2sk4198fg.pdf

2SK4198FG Ordering number ENA1369A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198FG Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Un

 9.45. Size:321K  sanyo
 2sk4197fg.pdf

2SK4197FG Ordering number ENA1367 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FG Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.46. Size:280K  renesas
 2sk4143-s17-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.47. Size:316K  renesas
 2sk4144-az.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.48. Size:258K  renesas
 2sk4147.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.49. Size:281K  renesas
 2sk4145-s19-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.50. Size:321K  renesas
 2sk4178-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.51. Size:321K  renesas
 2sk4178-s27-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.52. Size:218K  renesas
 2sk4146-s19-ay.pdf

Preliminary Data Sheet R07DS0130EJ0100 2SK4146 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 40 A) Low input capacitance Ciss = 3500 pF TYP. (VDS = 10 V) Ordering

 9.53. Size:588K  nec
 2sk4184-zk.pdf

MOSFET for LCD Backlight Inverters MOSFET for LCD Backlight Inverters Multi CCFL and EEFL have been applied in recent years for LCD TV s circuitry cost reduction purpose. In conjunction of this development trend, NEC Electronics offers low voltage MOSFET with optimal low on-state resistance that comes with high power package. CCFL Cold Cathode Fluorescent Lamp EEFL External Electrode

 9.54. Size:299K  onsemi
 2sk4177.pdf

Ordering number ENA0869A 2SK4177 N-Channel Power MOSFET http //onsemi.com 1500V, 2A, 13 , TO-263-2L Features ON-resistance RDS(on)=10 (typ.) Input capacitance Ciss=380pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Cu

 9.55. Size:50K  hitachi
 2sk410.pdf

2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondary breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to sourc

 9.56. Size:47K  hitachi
 2sk416s.pdf

 9.57. Size:149K  no
 2sk413.pdf

 9.58. Size:355K  sanken-ele
 2sk4161d.pdf

http //www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100 A) (BR)DSS D R = 4.8m max. (V =10V, I =35A) DS(ON) GS D R = 6.0m max. (V =8V, I =35A) DS(ON)

 9.59. Size:280K  inchange semiconductor
 2sk4193ls.pdf

isc N-Channel MOSFET Transistor 2SK4193LS FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.95 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.60. Size:272K  inchange semiconductor
 2sk4124.pdf

isc N-Channel MOSFET Transistor 2SK4124 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.61. Size:280K  inchange semiconductor
 2sk4123ls.pdf

isc N-Channel MOSFET Transistor 2SK4123LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.62. Size:282K  inchange semiconductor
 2sk4115.pdf

iscN-Channel MOSFET Transistor 2SK4115 FEATURES Low drain-source on-resistance RDS(ON) = 2.0 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.63. Size:355K  inchange semiconductor
 2sk4178.pdf

isc N-Channel MOSFET Transistor 2SK4178 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.64. Size:273K  inchange semiconductor
 2sk4126.pdf

isc N-Channel MOSFET Transistor 2SK4126 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.65. Size:289K  inchange semiconductor
 2sk4179.pdf

isc N-Channel MOSFET Transistor 2SK4179 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 13.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.66. Size:280K  inchange semiconductor
 2sk4118ls.pdf

isc N-Channel MOSFET Transistor 2SK4118LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.67. Size:279K  inchange semiconductor
 2sk4195ls.pdf

isc N-Channel MOSFET Transistor 2SK4195LS FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.68. Size:279K  inchange semiconductor
 2sk4194ls.pdf

isc N-Channel MOSFET Transistor 2SK4194LS FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.69. Size:280K  inchange semiconductor
 2sk4198ls.pdf

isc N-Channel MOSFET Transistor 2SK4198LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.70. Size:229K  inchange semiconductor
 2sk413.pdf

isc N-Channel MOSFET Transistor 2SK413 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 140V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching re

 9.71. Size:285K  inchange semiconductor
 2sk412.pdf

isc N-Channel MOSFET Transistor 2SK412 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.72. Size:281K  inchange semiconductor
 2sk4145.pdf

isc N-Channel MOSFET Transistor 2SK4145 FEATURES Static drain-source on-resistance RDS(on) 10m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V

 9.73. Size:279K  inchange semiconductor
 2sk4101ls.pdf

isc N-Channel MOSFET Transistor 2SK4101LS FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.74. Size:279K  inchange semiconductor
 2sk4144-az.pdf

isc N-Channel MOSFET Transistor 2SK4144-AZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.75. Size:279K  inchange semiconductor
 2sk4122ls.pdf

isc N-Channel MOSFET Transistor 2SK4122LS FEATURES Drain Current I = 15.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 9.76. Size:279K  inchange semiconductor
 2sk4119ls.pdf

isc N-Channel MOSFET Transistor 2SK4119LS FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.77. Size:259K  inchange semiconductor
 2sk4161d.pdf

isc N-Channel MOSFET Transistor 2SK4161D FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies . ABSOLUTE MAXIMUM

 9.78. Size:279K  inchange semiconductor
 2sk4100ls.pdf

isc N-Channel MOSFET Transistor 2SK4100LS FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.35 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.79. Size:288K  inchange semiconductor
 2sk4171.pdf

isc N-Channel MOSFET Transistor 2SK4171 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.80. Size:288K  inchange semiconductor
 2sk4146.pdf

isc N-Channel MOSFET Transistor 2SK4146 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 10.1m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.81. Size:272K  inchange semiconductor
 2sk4125.pdf

isc N-Channel MOSFET Transistor 2SK4125 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.61 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.82. Size:279K  inchange semiconductor
 2sk4143.pdf

isc N-Channel MOSFET Transistor 2SK4143 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.83. Size:279K  inchange semiconductor
 2sk4197ls.pdf

isc N-Channel MOSFET Transistor 2SK4197LS FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.25 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.84. Size:286K  inchange semiconductor
 2sk4108.pdf

isc N-Channel MOSFET Transistor 2SK4108 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.85. Size:280K  inchange semiconductor
 2sk4116ls.pdf

isc N-Channel MOSFET Transistor 2SK4116LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.54 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.86. Size:232K  inchange semiconductor
 2sk4177.pdf

isc N-Channel MOSFET Transistor 2SK4177 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYM

 9.87. Size:278K  inchange semiconductor
 2sk4192ls.pdf

isc N-Channel MOSFET Transistor 2SK4192LS FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.04 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.88. Size:279K  inchange semiconductor
 2sk4121ls.pdf

isc N-Channel MOSFET Transistor 2SK4121LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.89. Size:279K  inchange semiconductor
 2sk4191ls.pdf

isc N-Channel MOSFET Transistor 2SK4191LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.90. Size:287K  inchange semiconductor
 2sk4178-zk.pdf

isc N-Channel MOSFET Transistor 2SK4178-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.91. Size:280K  inchange semiconductor
 2sk4196ls.pdf

isc N-Channel MOSFET Transistor 2SK4196LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 9.92. Size:286K  inchange semiconductor
 2sk416s.pdf

isc N-Channel MOSFET Transistor 2SK416S FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.93. Size:280K  inchange semiconductor
 2sk4120ls.pdf

isc N-Channel MOSFET Transistor 2SK4120LS FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.68 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.94. Size:278K  inchange semiconductor
 2sk4117ls.pdf

isc N-Channel MOSFET Transistor 2SK4117LS FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.95. Size:238K  inchange semiconductor
 2sk414.pdf

isc N-Channel MOSFET Transistor 2SK414 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching re

 9.96. Size:280K  inchange semiconductor
 2sk4199ls.pdf

isc N-Channel MOSFET Transistor 2SK4199LS FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.97. Size:354K  inchange semiconductor
 2sk416l.pdf

isc N-Channel MOSFET Transistor 2SK416L FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi