AP2530GY-HF Todos los transistores

 

AP2530GY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2530GY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.3(2.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072(0.15) Ohm
   Paquete / Cubierta: SOT26

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AP2530GY-HF Datasheet (PDF)

 ..1. Size:85K  ape
ap2530gy-hf.pdf

AP2530GY-HF
AP2530GY-HF

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced processing

 6.1. Size:189K  ape
ap2530gy.pdf

AP2530GY-HF
AP2530GY-HF

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig

 8.1. Size:121K  ape
ap2530agy-hf.pdf

AP2530GY-HF
AP2530GY-HF

AP2530AGY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced pr

 8.2. Size:225K  ape
ap2530agy.pdf

AP2530GY-HF
AP2530GY-HF

AP2530AGY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced pr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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