AP2530GY-HF Todos los transistores

 

AP2530GY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2530GY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.3(2.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072(0.15) Ohm
   Paquete / Cubierta: SOT26
 

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AP2530GY-HF Datasheet (PDF)

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 ap2530gy-hf.pdf pdf_icon

AP2530GY-HF

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced processing

 6.1. Size:189K  ape
 ap2530gy.pdf pdf_icon

AP2530GY-HF

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig

 8.1. Size:121K  ape
 ap2530agy-hf.pdf pdf_icon

AP2530GY-HF

AP2530AGY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced pr

 8.2. Size:225K  ape
 ap2530agy.pdf pdf_icon

AP2530GY-HF

AP2530AGY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced pr

MOSTRAR MÁS

Otros transistores... 2SK413 , 2SK414 , 2SK415 , 2SK416L , 2SK416S , 2SK417 , AP2451GY-HF , AP2530AGY-HF , AO3400 , AP2531GY , AP2532GY , AP2533GY-HF , AP2535GEY-HF , AP25N10GH-HF , AP25N10GJ-HF , AP25N10GP-HF , AP25N10GS-HF .

History: RFP15N15 | QM3002F | RJK0601DPN-E0 | AOD600A70R | NTMFS4899NFT1G | SIA466EDJ | NCEP6060AGU

 

 
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