AP25N10GS-HF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP25N10GS-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP25N10GS-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO263

Búsqueda de reemplazo de AP25N10GS-HF MOSFET

- Selecciónⓘ de transistores por parámetros

AP25N10GS-HF datasheet

..1. Size:100K ape
ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220

6.1. Size:238K ape
ap25n10gh.pdf pdf_icon

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S

6.2. Size:100K ape
ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design

7.1. Size:746K ncepower
nceap25n10ak.pdf pdf_icon

http //www.ncepower.com NCEAP25N10AK NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5

Otros transistores... AP2530GY-HF, AP2531GY, AP2532GY, AP2533GY-HF, AP2535GEY-HF, AP25N10GH-HF, AP25N10GJ-HF, AP25N10GP-HF, AON7410, AP25P15GI, AP25P15GS-HF, AP2602GY, AP2603GY-HF, AP2604GY-HF, AP2605GY, AP2605GY0-HF, AP2606AGY-HF

AP25N10GS-HF Todos los transistores