AP2605GY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2605GY

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT26

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AP2605GY datasheet

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 ap2605gy.pdf pdf_icon

AP2605GY

AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant & Halogen-Free D SOT-26 D Description AP2605 series are from Advanced Power innovated design and silicon D process

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 ap2605gy-hf.pdf pdf_icon

AP2605GY

AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possi

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 ap2605gy0-hf.pdf pdf_icon

AP2605GY

AP2605GY0-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID -4A G RoHS Compliant & Halogen-Free S S D Description D Advanced Power MOSFETs uti

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 ap2607agy-hf.pdf pdf_icon

AP2605GY

AP2607AGY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible

MOSTRAR MÁS

Otros transistores... AP25N10GJ-HF, AP25N10GP-HF, AP25N10GS-HF, AP25P15GI, AP25P15GS-HF, AP2602GY, AP2603GY-HF, AP2604GY-HF, IRF530, AP2605GY0-HF, AP2606AGY-HF, AP2606GY-HF, AP2607AGY-HF, AP2607GY-HF, AP2608AGK-HF, AP2608AGY-HF, AP2608GY