AP2606AGY-HF Todos los transistores

 

AP2606AGY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2606AGY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT26
 

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AP2606AGY-HF Datasheet (PDF)

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 ap2606agy-hf.pdf pdf_icon

AP2606AGY-HF

AP2606AGY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the

 8.1. Size:163K  ape
 ap2606cmt.pdf pdf_icon

AP2606AGY-HF

AP2606CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD SO-8 Compatible with Heatsink RDS(ON) 0.8m Ultra Low On-resistance ID4 280AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP2606C series are from Advanced Power innovated design andsilicon process technology to a

 8.2. Size:89K  ape
 ap2606gy-hf.pdf pdf_icon

AP2606AGY-HF

AP2606GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7AGD RoHS CompliantDSOT-26DescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible

 9.1. Size:95K  ape
 ap2607agy-hf.pdf pdf_icon

AP2606AGY-HF

AP2607AGY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible

MOSTRAR MÁS

Otros transistores... AP25N10GS-HF , AP25P15GI , AP25P15GS-HF , AP2602GY , AP2603GY-HF , AP2604GY-HF , AP2605GY , AP2605GY0-HF , IRFP450 , AP2606GY-HF , AP2607AGY-HF , AP2607GY-HF , AP2608AGK-HF , AP2608AGY-HF , AP2608GY , AP2609GY-HF , AP2609GYT-HF .

History: FQU3N60TU | AP2329GN-HF

 

 
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