AP2615GEY-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2615GEY-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SOT26

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AP2615GEY-HF datasheet

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 ap2615gey.pdf pdf_icon

AP2615GEY-HF

AP2615GEY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -30V D Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0A G D D RoHS Compliant & Halogen-Free SOT-26 D Description AP2615 series are from Advanced Power innovated design and silicon G process technology to

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 ap2615gy-hf.pdf pdf_icon

AP2615GEY-HF

AP2615GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5A G RoHS Compliant & Halogen-Free S S D Description D AP2615 series are from Advanced Power innovated design and silicon G process technology

 9.1. Size:56K  ape
 ap2611gyt-hf.pdf pdf_icon

AP2615GEY-HF

AP2611GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device d

 9.2. Size:96K  ape
 ap2612gy-hf.pdf pdf_icon

AP2615GEY-HF

AP2612GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS 30V D D Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6A G D RoHS Compliant D SOT-26 Description Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistanc

MOSTRAR MÁS

Otros transistores... AP2609GY-HF, AP2609GYT-HF, AP2610GY-HF, AP2611GYT-HF, AP2612GY-HF, AP2613GY-HF, AP2613GYT-HF, AP2614GY-HF, AO3407, AP2615GY-HF, AP2616GY-HF, AP2622GY-HF, AP2623GY, AP2625GY, AP2626GY-HF, AP2732GK, AP2761I-A