AP2615GEY-HF Todos los transistores

 

AP2615GEY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2615GEY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT26
 

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AP2615GEY-HF Datasheet (PDF)

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 ap2615gey.pdf pdf_icon

AP2615GEY-HF

AP2615GEY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -30VD Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0AGDD RoHS Compliant & Halogen-FreeSOT-26DDescriptionAP2615 series are from Advanced Power innovated design and siliconGprocess technology to

 7.1. Size:93K  ape
 ap2615gy-hf.pdf pdf_icon

AP2615GEY-HF

AP2615GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2615 series are from Advanced Power innovated design and siliconGprocess technology

 9.1. Size:56K  ape
 ap2611gyt-hf.pdf pdf_icon

AP2615GEY-HF

AP2611GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d

 9.2. Size:96K  ape
 ap2612gy-hf.pdf pdf_icon

AP2615GEY-HF

AP2612GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS 30VDD Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6AGD RoHS CompliantDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the lowest possible on-resistanc

MOSTRAR MÁS

Otros transistores... AP2609GY-HF , AP2609GYT-HF , AP2610GY-HF , AP2611GYT-HF , AP2612GY-HF , AP2613GY-HF , AP2613GYT-HF , AP2614GY-HF , 7N60 , AP2615GY-HF , AP2616GY-HF , AP2622GY-HF , AP2623GY , AP2625GY , AP2626GY-HF , AP2732GK , AP2761I-A .

 

 
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