AP2761P-A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2761P-A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET AP2761P-A

AP2761P-A Datasheet (PDF)

..1. Size:60K ape
ap2761p-a.pdf

AP2761P-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-

8.1. Size:58K ape
ap2761i-a-hf.pdf

AP2761I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-r

8.2. Size:58K ape
ap2761i-a.pdf

AP2761I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AGSDescriptionAP2761 series are specially designed as main switching devices for universal90~265VAC off-line AC/DC converter applications. TO-220CFM type p

8.3. Size:93K ape
ap2761i-h.pdf

AP2761I-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6AG RoHS CompliantSDescriptionAP2761 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicatio

8.4. Size:59K ape
ap2761r-a.pdf

AP2761R-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionAP2761 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications

8.5. Size:94K ape
ap2761s-a-hf.pdf

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761S is specially designed as main switching devices for universal90~265VAC off-line AC/DC converter appl

8.6. Size:166K ape
ap2761s-a.pdf

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

8.7. Size:93K ape
ap2761i-h-hf.pdf

AP2761I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.3 Simple Drive Requirement ID 6AG RoHS CompliantSDescriptionAP2761 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicatio

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: