AP2R803GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2R803GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: TO252

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AP2R803GH-HF datasheet

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 ap2r803gh-hf.pdf pdf_icon

AP2R803GH-HF

AP2R803GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, rugg

 5.1. Size:93K  ape
 ap2r803gh.pdf pdf_icon

AP2R803GH-HF

AP2R803GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best G D combination of fast switching, ruggedized device design, low on-resista

 6.1. Size:59K  ape
 ap2r803gmt-hf.pdf pdf_icon

AP2R803GH-HF

AP2R803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105A G RoHS Compliant & Halogen-Free S D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 6.2. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803GH-HF

AP2R803GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75A G RoHS Compliant & Halogen-Free S Description AP2R803 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

MOSTRAR MÁS

Otros transistores... AP2765I-A-HF, AP2851GO, AP2852GO, AP2864I-A-HF, AP2N7002K-HF, AP2R403AGMT-HF, AP2R403GMT-HF, AP2R803AGMT-HF, IRFZ44N, AP2R803GMT-HF, AP2RA04GMT-HF, AP30N30W, AP30N30WI, AP30P10GH-HF, AP30P10GI, AP30P10GP-HF, AP30P10GS