AP2R803GMT-HF Todos los transistores

 

AP2R803GMT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2R803GMT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: PMPAK5X6
 

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AP2R803GMT-HF Datasheet (PDF)

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 ap2r803gmt-hf.pdf pdf_icon

AP2R803GMT-HF

AP2R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

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 ap2r803gm-hf.pdf pdf_icon

AP2R803GMT-HF

AP2R803GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 3.2mD Fast Switching Characteristic ID 22.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP2R803 series are from Advanced Power innovated design and siliconprocess tech

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 ap2r803gh.pdf pdf_icon

AP2R803GMT-HF

AP2R803GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGDcombination of fast switching, ruggedized device design, low on-resista

 6.2. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803GMT-HF

AP2R803GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75AG RoHS Compliant & Halogen-FreeSDescriptionAP2R803 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

MOSTRAR MÁS

Otros transistores... AP2851GO , AP2852GO , AP2864I-A-HF , AP2N7002K-HF , AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , IRF3205 , AP2RA04GMT-HF , AP30N30W , AP30N30WI , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , AP30P10GS , AP30T03GH-HF .

History: APT10M11JVFR

 

 
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