AP30P10GS Todos los transistores

 

AP30P10GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30P10GS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de AP30P10GS MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP30P10GS Datasheet (PDF)

 ..1. Size:93K  ape
 ap30p10gs.pdf pdf_icon

AP30P10GS

AP30P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 0.1. Size:94K  ape
 ap30p10gs-hf.pdf pdf_icon

AP30P10GS

AP30P10GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 6.1. Size:151K  ape
 ap30p10gi.pdf pdf_icon

AP30P10GS

AP30P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 6.2. Size:185K  ape
 ap30p10gh.pdf pdf_icon

AP30P10GS

AP30P10GH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAP30P10 series are from Advanced Power innovat

MOSTRAR MÁS

Otros transistores... AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W , AP30N30WI , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , IRF640 , AP30T03GH-HF , AP30T10GH-HF , AP30T10GI-HF , AP30T10GK-HF , AP30T10GM-HF , AP30T10GP-HF , AP30T10GS-HF , AP3310GH-HF .

History: TPA65R170M | RFM12P10 | SSM4532GM | MPVA20N50F | FQD12N20 | AP4224AGM | FQI50N06TU

 

 
Back to Top

 


 
.