AP3310GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3310GH-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.5 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 60 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.15 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET AP3310GH-HF
AP3310GH-HF Datasheet (PDF)
ap3310gh-hf ap3310gj-hf.pdf
AP3310GH/J-HFRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDSTO-252(H)combination of fast switching, low on-resis
ap3310gh.pdf
AP3310GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AG RoHS Compliant & Halogen-FreeSDescriptionAP3310 series are from Advanced Power innovated design andsilicon process technology to achieve th
ap3310gj ap3310gh.pdf
AP3310GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSTO-252(H)best combination of fast switching, low on-resistan
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