AP3310GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3310GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO251

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AP3310GJ-HF datasheet

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 ap3310gh-hf ap3310gj-hf.pdf pdf_icon

AP3310GJ-HF

AP3310GH/J-HF RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10A G S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S TO-252(H) combination of fast switching, low on-resis

 6.1. Size:104K  ape
 ap3310gj ap3310gh.pdf pdf_icon

AP3310GJ-HF

AP3310GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10A G S Description Advanced Power MOSFETs from APEC provide the designer with the G D S TO-252(H) best combination of fast switching, low on-resistan

 7.1. Size:244K  ape
 ap3310gh.pdf pdf_icon

AP3310GJ-HF

AP3310GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10A G RoHS Compliant & Halogen-Free S Description AP3310 series are from Advanced Power innovated design and silicon process technology to achieve th

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