AP3990S-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3990S-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 174 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 225 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AP3990S-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP3990S-HF datasheet
ap3990s-hf.pdf
AP3990S-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description G AP3990 series are specially designed as main switching devices for D S TO-263(S) universal 90 265VAC of
ap3990s.pdf
AP3990S-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description G AP3990 series are from Advanced Power innovat
ap3990i.pdf
AP3990I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP3990 series are from Advanced Power innovated
ap3990r.pdf
AP3990R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP3990 series are from Advanced Power innovated design and G silicon process technology to achieve the lowes
Otros transistores... AP3988I-HF, AP3988P-HF, AP3989I, AP3989P, AP3989R-HF, AP3990I-HF, AP3990P, AP3990R-HF, K3569, AP3990W, AP3R303GMT-HF, AP3R604AGH-HF, AP3R604GH-HF, AP3R604GMT-HF, AP4002H, AP4002I-HF, AP4002J
History: 2SK512
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