AP3R604GMT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3R604GMT-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 615 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
Encapsulados: PMPAK5X6
Búsqueda de reemplazo de AP3R604GMT-HF MOSFET
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AP3R604GMT-HF datasheet
ap3r604gmt-hf.pdf
AP3R604GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID 120A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge
ap3r604gmt-l.pdf
AP3R604GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID5 120A G RoHS Compliant & Halogen-Free S D D D Description D AP3R604 series are from Advanced Power innovated design and silicon process technology to achie
ap3r604gh.pdf
AP3R604GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device de
Otros transistores... AP3990I-HF, AP3990P, AP3990R-HF, AP3990S-HF, AP3990W, AP3R303GMT-HF, AP3R604AGH-HF, AP3R604GH-HF, K4145, AP4002H, AP4002I-HF, AP4002J, AP4002P, AP4002S, 2N3819, 2SK427, 2SK429S
History: MPSA60M250CFD
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