2SK427 Todos los transistores

 ..1. Size:225K  sanyo
 2sk427.pdf

Ordering number EN1404B N-Channel Junction Silicon FET 2SK427 AM Tuner RF Amplifier Applications Applications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit mm 2034A Features [2SK427] 2.2 4.0 Large yfs . Ultralow noise figure. Small Crss. 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 SANYO SPA 3.8nom Spe

 9.1. Size:272K  1
 2sk4204ls.pdf

2SK4204LS Ordering number ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4204LS Applications Features 4V drive. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 V Gate-to-Source Voltage VGSS 20 V Drain Cur

 9.2. Size:273K  1
 2sk4203ls.pdf

2SK4203LS Ordering number ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4203LS Applications Features 4V drive. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 V Gate-to-Source Voltage VGSS 20 V Drain Cur

 9.3. Size:269K  1
 2sk4227js.pdf

2SK4227JS Ordering number ENA1355 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4227JS Applications Features Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Ga

 9.4. Size:208K  toshiba
 2sk4207.pdf

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4207 Swiching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON-resistance RDS (ON) = 0.78 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID

 9.5. Size:298K  sanyo
 2sk4222.pdf

2SK4222 Ordering number ENA1519 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4222 Applications Features Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600

 9.6. Size:496K  sanyo
 2sk4209.pdf

2SK4209 Ordering number ENA1516 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4209 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit D

 9.7. Size:497K  sanyo
 2sk4210.pdf

2SK4210 Ordering number ENA1517 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4210 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit D

 9.8. Size:298K  sanyo
 2sk4221.pdf

2SK4221 Ordering number ENA1518 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4221 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Con

 9.9. Size:272K  sanyo
 2sk4200ls.pdf

2SK4200LS Ordering number ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4200LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 9.10. Size:252K  renesas
 2sk4212.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.11. Size:297K  renesas
 2sk4202-s19-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.12. Size:291K  renesas
 2sk4201-s19-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.13. Size:146K  nec
 2sk4212-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 7.8 m M

 9.14. Size:153K  nec
 2sk4213.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 m M

 9.15. Size:152K  nec
 2sk4213-zk 2sk4213a-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 m M

 9.16. Size:146K  nec
 2sk4212a-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 7.8 m M

 9.17. Size:48K  hitachi
 2sk429.pdf

 9.18. Size:135K  hitachi
 2sk422.pdf

 9.19. Size:81K  no
 2sk425.pdf

 9.20. Size:844K  cn vbsemi
 2sk4212a-zk.pdf

2SK4212A-ZK www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABS

 9.21. Size:287K  inchange semiconductor
 2sk4213a.pdf

isc N-Channel MOSFET Transistor 2SK4213A FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.22. Size:288K  inchange semiconductor
 2sk4201.pdf

isc N-Channel MOSFET Transistor 2SK4201 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.23. Size:232K  inchange semiconductor
 2sk429.pdf

isc N-Channel MOSFET Transistor 2SK429 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hhigh speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL VALUE UNIT ARAMETER V Drai

 9.24. Size:272K  inchange semiconductor
 2sk4222.pdf

isc N-Channel MOSFET Transistor 2SK4222 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.25. Size:282K  inchange semiconductor
 2sk4207.pdf

iscN-Channel MOSFET Transistor 2SK4207 FEATURES Low drain-source on-resistance RDS(ON) = 0.95 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.26. Size:205K  inchange semiconductor
 2sk428.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK428 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM R

 9.27. Size:286K  inchange semiconductor
 2sk429s.pdf

isc N-Channel MOSFET Transistor 2SK429S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.28. Size:354K  inchange semiconductor
 2sk429l.pdf

isc N-Channel MOSFET Transistor 2SK429L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.29. Size:272K  inchange semiconductor
 2sk4210.pdf

isc N-Channel MOSFET Transistor 2SK4210 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.30. Size:279K  inchange semiconductor
 2sk4204ls.pdf

isc N-Channel MOSFET Transistor 2SK4204LS FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 45V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.31. Size:280K  inchange semiconductor
 2sk4203ls.pdf

isc N-Channel MOSFET Transistor 2SK4203LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 45V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.32. Size:286K  inchange semiconductor
 2sk4212a.pdf

isc N-Channel MOSFET Transistor 2SK4212A FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.33. Size:288K  inchange semiconductor
 2sk4202.pdf

isc N-Channel MOSFET Transistor 2SK4202 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.34. Size:272K  inchange semiconductor
 2sk4221.pdf

isc N-Channel MOSFET Transistor 2SK4221 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.24 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.35. Size:280K  inchange semiconductor
 2sk4227js.pdf

isc N-Channel MOSFET Transistor 2SK4227JS FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 13.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.36. Size:279K  inchange semiconductor
 2sk4200ls.pdf

isc N-Channel MOSFET Transistor 2SK4200LS FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 2.73 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol