2SK439 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK439
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
   Cossⓘ - Capacitancia de salida: 1.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 125 Ohm
   Paquete / Cubierta: SPAK

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2SK439 Datasheet (PDF)

..1. Size:23K hitachi
2sk439.pdf

2SK439Silicon N-Channel MOS FETADE-208-1172 (Z)1st. EditionMar. 2001ApplicationVHF amplifierOutlineSPAK1. Gate122. Source33. Drain2SK439Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 20 VGate to source voltage VGSS 5VDrain current ID 30 mAGate current IG 1mAChannel power dissipation Pch 300 mWChannel

9.1. Size:210K 1
2sk430l 2sk430s.pdf

9.2. Size:224K sanyo
2sk436.pdf

Ordering number:EN1405BN-Channel Junction Silicon FET2SK436High-Frequency, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit:mm2050AFeatures [2SK436] Large yfs.0.40.16 Ultralow noise figure. 3 Small Crss.0 to 0.1 Ultrasmall-sized package permitting 2SK436-app

9.3. Size:181K isahaya
2sk433.pdf

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONMarketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 JapanKeep safety first in your circuit designs!ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi

9.4. Size:354K inchange semiconductor
2sk430l.pdf

isc N-Channel MOSFET Transistor 2SK430LFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

9.5. Size:286K inchange semiconductor
2sk430s.pdf

isc N-Channel MOSFET Transistor 2SK430SFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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